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The Growth of β-SiC on Si and Poly-Si on β-SiC by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

C. W. Liu  and
J. C. Sturm
C. W. Liu
Affiliation:
National Taiwan University, Dept. of Electrical Engineering, Taipei, Taiwan
J. C. Sturm
Affiliation:
Princeton University, Dept. of Electric Enginering, Princeton, New Jersey
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Abstract

The growth properties of β-SiC on (100) Si grown by rapid thermal chemical vapor deposition, using a single precursor (methylsilane) without an initial surface carbonization step, were investigated. An optimun growth temperature at 800°C was found to grow single crystalline SiC. The single crystalline SiC films were used to be the buffer layers for the growth of subsequent poly Si films. For the poly Si grown at low temperature (625°C), the (110) Si diffraction was found to be the dominant peak in the X-ray diffraction spectra at the initial growth stage, while the poly Si grown on oxide was dominated by (111) texture. A small average misfit (4 %) between (110) Si planes and (100) SiC planes was proposed to explain this effect. To apply the Si/SiC/Si multilayers, SiC/Si heterojunction bipolar transistors (HBT's) were fabricated and compared to Si bipolar junction transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 127
Copyright
Copyright © Materials Research Society 1997

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References

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