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Growth of Epitaxial Site-Engineered Bi4Ti3O12-Basded Thin Films by Mocvdand Their Characterization

Published online by Cambridge University Press:  11 February 2011

Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Tomohiro Sakai
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Takayuki Watanabe
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan
Minoru Osada
Affiliation:
PRESTO, Japan Science and Technology (JST), Kanagawa, Japan
Masato Kakihana
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, Kanagawa, Japan
Keisuke Saito
Affiliation:
PANalytical Application Laboratory, Tokyo, Japan
Yuji Noguchi
Affiliation:
Institute of Industrial Science, University of Tokyo, Tokyo, Japan
Masaru Miyayama
Affiliation:
Institute of Industrial Science, University of Tokyo, Tokyo, Japan
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Abstract

Thin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) –preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BLT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc ). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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