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Growth of Diamond Films Using C3F8 AND H2 in A New System

Published online by Cambridge University Press:  22 February 2011

Ping Huangfu
Affiliation:
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 P. R. China
Zengsun Jin
Affiliation:
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 P. R. China
Xianyi Lu
Affiliation:
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 P. R. China
Guangtian Zou
Affiliation:
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 P. R. China
Huaxian Xiao
Affiliation:
Institute of Physics and Chemistry Engineering, Tianjin 300180, P. R. China
Tianyi Chen
Affiliation:
Institute of Physics and Chemistry Engineering, Tianjin 300180, P. R. China
Mingkai Liu
Affiliation:
Institute of Physics and Chemistry Engineering, Tianjin 300180, P. R. China
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Abstract

In the present study, the new system used C3F8 and H2 as source gases. Filament-assisted chemical vapor deposition was utilized. Continuous diamond films were grown on the Si and Mo substrates without any surface pretreatment. The results of scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and atomic force microscopy measurements indicate that the films deposited on the Mo substrates are of high quality. Homoepitaxial diamond films were grown on the high pressure synthetic single crystal diamond substrates. The results show that in our experimental conditions epitaxial films were easily grown on the (111) synthetic diamond substrates and sometimes epitaxial filmse also grown on the (100) synthetic diamond substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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