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Growth Conditions Effect on the Structure and Optical Properties of ZnO Thin Films Synthesized by rf magnetron Sputtering

Published online by Cambridge University Press:  31 January 2011

Luis Angelats-Silva
Affiliation:
langelats@yahoo.com, Universidad Nacional de Trujillo, Physics, Trujillo, Peru
Maharaj S. Tomar
Affiliation:
maharajs.tomar@upr.edu, University of Puerto Rico, Department of Physics, Mayaguez, Puerto Rico
Oscar Perales-Perez
Affiliation:
operalesperez@yahoo.com, University of Puerto Rico, Department of Engineering Science & Materials, Mayaguez, Puerto Rico
S. P. Singh
Affiliation:
singh@uprm.edu, U of Puerto Rico at Mayaguez, Engineering Science and Materials, Mayaguez, Mayaguez, Puerto Rico
Segundo R. Jauregui-Rosas
Affiliation:
segundorj@yahoo.es, Universidad Nacional de Trujillo, Physics, Trujillo, Peru
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Abstract

We report a systematic study of the influence of the target-substrate distance and rf power on the structural and optical properties of ZnO thin films grown by rf magnetron sputtering in Ar atmosphere from ZnO sputtering target. Sharp (002) peak showed by XRD indicates a c-axis crystalline growth of ZnO films. Growth rate remained almost constant for short target-substrate distances. However, the grain size increases with the rf power decreasing the compressive stress in ZnO films. As-grown ZnO films have average transmittance more than 80% in the visible region. Optical bandgap (Eg ) increases from 3.18 to 3.27 eV as increase the target-substrate distance probably due to low stress compression in ZnO films. In addition, when rf power is above 100 W, the optical band gap increases as increase of the stress compression.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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