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Good Temperature Performances of 870nm Resonant Cavity Light Emitting Diode (RCLED)

Published online by Cambridge University Press:  26 February 2011

Lih-Wen Laih
Affiliation:
Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Rd., Jung-Li, TAIWAN 320, R.O.C. Phone: +886–3–4581196–5105; Fax: +886–3–4588924; E-mail: lwlaih@cyu.edu.tw
Yi-Hao Wu
Affiliation:
Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Rd., Jung-Li, TAIWAN 320, R.O.C. Phone: +886–3–4581196–5105; Fax: +886–3–4588924; E-mail: lwlaih@cyu.edu.tw
Li-Hong Laih
Affiliation:
Millennium Communication Co., Ltd. No. 5–1, Kuan Fu S. Rd., Hsinchu Industrial Park, 303, Hsinchu Hsien, TAIWAN, R.O.C.
Rong-Moo Hong
Affiliation:
Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Rd., Jung-Li, TAIWAN 320, R.O.C. Phone: +886–3–4581196–5105; Fax: +886–3–4588924; E-mail: lwlaih@cyu.edu.tw
Hao-Chung Guo
Affiliation:
Institute of Electro-Optical Engineering National Chiao Tung University, 1001 Ta Hsueh Rd. Hsinchu TAIWAN 300, R.O.C.
Jung-Lung Yu
Affiliation:
Millennium Communication Co., Ltd. No. 5–1, Kuan Fu S. Rd., Hsinchu Industrial Park, 303, Hsinchu Hsien, TAIWAN, R.O.C.
Yu-Hsiang Huang
Affiliation:
Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Rd., Jung-Li, TAIWAN 320, R.O.C. Phone: +886–3–4581196–5105; Fax: +886–3–4588924; E-mail: lwlaih@cyu.edu.tw
Yi-An Chang
Affiliation:
Institute of Electro-Optical Engineering National Chiao Tung University, 1001 Ta Hsueh Rd. Hsinchu TAIWAN 300, R.O.C.
Ren-Jiun Chang
Affiliation:
Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Rd., Jung-Li, TAIWAN 320, R.O.C. Phone: +886–3–4581196–5105; Fax: +886–3–4588924; E-mail: lwlaih@cyu.edu.tw
Chun-Hui Yang
Affiliation:
Department of Electronic Engineering, Ching Yun University, 229, Chien-Hsin Rd., Jung-Li, TAIWAN 320, R.O.C. Phone: +886–3–4581196–5105; Fax: +886–3–4588924; E-mail: lwlaih@cyu.edu.tw
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Abstract

A high performance of wavelength 870nm resonant cavity LED (RCLED) was fabricated. The high performance of InGaAs/GaAs multiple quantum wells (MQWs) and distributed Bragg reflector (DBR) were employed to achieve the high transmission rate. Two devices A and B were fabricated in this paper. Device A has an offset of 10nm between active region gain and resonant gain, and device B without it. Due to the wavelength shift of active region gain is faster than that of DBR's resonant gain at higher temperature. Device A shows the better temperature performances than device B. A cutoff frequency of 60MHz, a low forward voltage of 1.6V, a output power of 1mW at 10mA and a output power temperature variation (ΔP/ΔT) of –0.02dBm/ °C with chip dimensions of 220um × 220um and 85um diameter emitting window are obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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Good Temperature Performances of 870nm Resonant Cavity Light Emitting Diode (RCLED)
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