Hostname: page-component-84b7d79bbc-c654p Total loading time: 0 Render date: 2024-08-01T18:03:08.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Giant Magnetoresistance Behavior in Epitaxial Nd0.7Sr0.3MnO3−δ and La0.67Ba0.33MnO3−δ Thin Films

Published online by Cambridge University Press:  15 February 2011

G.C. Xiong ,
Q. Li ,
H.L. Ju ,
J. Wu ,
L. Senapati ,
R.L. Greene  and
T. Venkatesan
G.C. Xiong
Affiliation:
also Department of Physics and National Mesoscopic Physics Laboratory, Peking University, 100871 Beijing, P.R. China.
Q. Li
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
H.L. Ju
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
J. Wu
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
L. Senapati
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
R.L. Greene
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
T. Venkatesan
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742-4111
Get access

Abstract

Epitaxial Nd0.7Sr0.3MnO3-δ and La0.67Ba0.33MnO3-δ thin films with large magnetoresistance ratios have been prepared by pulsed laser deposition. Huge negative magnetoresistance ratios of -ΔR/RH > 1×106 % were obtained at 60 K and a magnetic field of 8 T in a Nd0.7Sr0.3MnO3-δ film. The influence of sample preparation conditions on the resistivity behavior of these films has been studied. Results suggest that oxygen stoichiometry and diffusion are important factors in causing the behavior observed in doped manganese oxide films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 384: Symposium L – Magnetic Ultrathin films, Multilayers and Surfaces , 1995 , 433
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Helmolt, R. von, Wecker, J., Holzapfel, B., Schultz, L. and Samwer, K., Phys. Rev. Lett., 71, 2331 (1993).Google Scholar
2. Chahara, Ken-ichi, Ohno, T., Kasai, M. and Kozono, Y., Appl. Phys. Lett., 63, 1990 (1993).Google Scholar
3. Jin, S., Tiefel, T.H., McCormack, M., Fastnacht, R.A., R. Ramesh and Chen, L.H., Science 264, 413 (1994).Google Scholar
4. McCormack, M., Jin, S., Tiefel, T.H., Fleming, R.M., Phillips, J.M. and Ramesh, R., Appl. Phys. Lett., 64, 3047 (1994).Google Scholar
5. Ju, H.L., Kwon, C., Li, Qi, Greene, R.L. and Venkatesan, T., Appl. Phys. Lett., 65, 2109 (1994).Google Scholar
6. Xiong, G.C., Li, Q., Ju, H.L., Mao, S.N., Senapati, L., Xi, X.X., Greene, R.L. and Venkatesan, T., Appl. Phys. Lett. 66, 1427 (1995).Google Scholar
7. Jonker, G.H. and Santen, J.H. van, Physica, 16, 337 (1950).Google Scholar
8. Jonker, G.H., Physica, 22, 707 (1956).Google Scholar
9. Ju, H.L., Gopalakrishnan, J., Peng, J.L., Li, Qi, Xiong, G.C., Venkatesan, T. and Greene, R.L., Phys. Rev. B51, 6143 (1995).Google Scholar