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A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces.

Published online by Cambridge University Press:  22 February 2011

R.C. Pond ,
J.P. Gowers ,
D.B. Holt ,
B.A. Joyce ,
J.H. Neave  and
P.K. Larsen
R.C. Pond
Affiliation:
Department of Metallurgy and Materials Science, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, U.K.
J.P. Gowers
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHl 5HA, U.K.
D.B. Holt
Affiliation:
Department of Metallurgy, Imperial College, London, SW7 2BP, U.K.
B.A. Joyce
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHl 5HA, U.K.
J.H. Neave
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RHl 5HA, U.K.
P.K. Larsen
Affiliation:
Philips Research Laboratories, P.O. Box 80,000, 5600 J.A. Eindhoven, The Netherlands.
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Abstract

Observations of antiphase disorder obtained using a new technique of transmission electron microscopy, in (100) epitaxial layers of GaAs:Ge produced by MBE are presented. The crystallographic origin of this type of disorder is analysed using a recently developed approach. It is shown that antiphase disorder can exist in epitaxial layers where the substrate orientation is of the form {hko}this is consistent with experimental observations that disorder is observed on (100) and (110) substrates, but not on (111) or (211), for example. Antiphase boundaries in {hko} specimens are shown to separate interfacial domains which are energetically degenerate and related by symmetry operations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 273
Copyright
Copyright © Materials Research Society 1984

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References

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