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GaN-Based Neutron Scintillators with a 6LiF Conversion Layer

Published online by Cambridge University Press:  13 February 2012

Andrew G. Melton ,
Eric Burgett ,
Nolan Hertel  and
Ian T. Ferguson
Andrew G. Melton
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NC, 28223, USA
Eric Burgett
Affiliation:
Nuclear Engineering Program, Idaho State University, Pocatello, Idaho 83209, USA
Nolan Hertel
Affiliation:
Nuclear Engineering and Radiological Engineering Program, George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
Ian T. Ferguson
Affiliation:
Department of Electrical and Computer Engineering, University of North Carolina at Charlotte, Charlotte, NC, 28223, USA
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Abstract

Thin film gallium nitride (GaN) scintillators have been produced by MOCVD and made neutron-sensitive by applying an enriched lithium-6 fluoride (6LiF) conversion layer. The 6Li(n,α) reaction produces both alpha and triton particles, which have very penetration depths in GaN. The range and energy deposition characteristics of these particles in GaN have been simulated. Alpha-induced scintillation was measured in silicon-doped GaN using an americium-241 (241Am) source. The thermal neutron responses of the 6LiF-coated GaN scintillator were tested using two thermal neutron sources, an 241Am-Be source inside a graphite pile and a reactor source. The scintillator was found to have a linear response to thermal neutron flux level over a range of more than three orders of magnitude.

Keywords

Ganeutron irradiationnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o04-08
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

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