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Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source

Published online by Cambridge University Press:  15 February 2011

Ling Zhang ,
Rong Zhang ,
Marek P. Boleslawski  and
T.F. Kuech
Ling Zhang
Affiliation:
Aldrich Chemical, Milwaukee, WI.
Rong Zhang
Affiliation:
Aldrich Chemical, Milwaukee, WI.
Marek P. Boleslawski
Affiliation:
Aldrich Chemical, Milwaukee, WI.
T.F. Kuech
Affiliation:
Aldrich Chemical, Milwaukee, WI.
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Abstract

Metal organic vapor phase epitaxy (MOVPE) of GaN has been carried out using diethyl gallium chloride (DEGaCI) and ammonia. The growth rate and efficiency of the DEGaCl-based growth decreases with increasing temperature when compared to trimethyl gallium (TMG)-based growth under similar conditions. Both low temperature buffer and the high temperature GaN layers were grown using the DEGaCI-NH3 precursor combination on the basal plane of sapphire and compared to similar structures grown using TMG and NH3. DEGaCl-based growth reveals an improved growth behavior under identical growth conditions to the conventional TMGa and ammonia growth. X-ray, Hall, and atomic force microscopy (AFM) measurements have been carried out on these samples providing a direct comparison of materials properties associated with these growth precursors. For the DEGaCl-based growth, the x-ray rocking curve line width, using the (0002) reflection, is as low as 300 arcsec on a 2.5-micron thick film. A RMS surface roughness of ∼0.5nm measured over a 10x10 micron area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.62
Copyright
Copyright © Materials Research Society 1999

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