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Formation of Cobalt Silicides in Arsenic Implanted Cobalt on Silicon System

Published online by Cambridge University Press:  25 February 2011

A.R. Sitaram  and
S.P. Murarka
A.R. Sitaram
Affiliation:
now with APRDL, Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721
S.P. Murarka
Affiliation:
Materials Engineering Department/CIE, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The importance of self aligned cobalt disilicide technology for gate and interconnection, and contact metallization cannot be overemphasized. Simultaneously, the concept of forming shallow junctions by using the metal or silicide layer as a dopant source is gaining prominence. In this work, we will present and discuss the results of the effect of arsenic, implanted into cobalt films on silicon, on the Co-Si reaction. Arsenic redistribution during the reaction, both during furnace annealing and RTA, and the effect of ion implantation and dose and energy will also be included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 97
Copyright
Copyright © Materials Research Society 1990

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References

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