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Formation of Chemically Clean and Morphologically Smooth PtSi/Si Interfaces

Published online by Cambridge University Press:  21 February 2011

Suhit R. Das
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KlA 0R6, Canada
D-X. Xu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KlA 0R6, Canada
J. Phillips
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KlA 0R6, Canada
J. McCaffrey
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KlA 0R6, Canada
L. LeBrun
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario KlA 0R6, Canada
A. Naem
Affiliation:
Advanced Interconnects, Northern Telecom Limited, 185 Corkstown Road, Nepean, P.O. Box 3511, Station C, Ontario KlY 4H7, Canada
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Abstract

PtSi/Si interfaces have been formed by depositing Pt layers on chemically cleaned, lightly doped, n-type Si (100) wafers in a UHV magnetron sputter-deposition system using ultra high purity Ar as the sputter gas, followed by ex-situ silicidation in N2 ambient utilizing a 3-step rapid thermal annealing (RTA) process. The polycrystalline PtSi layer, with oriented grains ranging in size from 50-100 nm, exhibits a columnar growth morphology. The PtSi/Si interface is planar with interface roughness in the order of 5 nm peak-to-peak. Auger depth profile shows uniform composition through the PtSi layer and a clean and chemically abrupt PtSi/Si interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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