Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-s5ss2 Total loading time: 0.373 Render date: 2021-02-25T17:20:57.861Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

Formation of Buried Nitride Layers in (110) Silicon

Published online by Cambridge University Press:  28 February 2011

Abhaya K. Datye
Affiliation:
Dept of Chemical and Nuclear Engineering
Vidya S. Kaushik
Affiliation:
Dept of Chemical and Nuclear Engineering
Don L. Kendall
Affiliation:
Dept. of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
Bernardo Martinez-Tovar
Affiliation:
Dept. of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87131.
David R. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
Get access

Abstract

High fluence ion implantation of N (1x1018/cm2 at 150 keV) has been used to form buried nitride layers in (110) silicon. After annealing at 1200 C for 5 hrs. a continuous, polycrystalline alpha-Si,N- layer (200 nm thick) is observed beneath a surface silicon film 306 nm thick. The upper Si/Si3N4 interface appears to be more abrupt than that observed in (100) silicon with minimal dendritic intergrowth and no evidence for microtwinning in the silicon. Furthermore, a band of nitride precipitates can be detected 500 nm below the continuous nitride layer. These nitride precipitates grow semi-coherently within the silicon with no observable strain or misfit dislocations within the silicon. The nitride precipitates are internally faulted to accomodate the 10% lattice mismatch in the (0001) nitride direction. Short term anneals reveal that the precipitates have fully crystallized within 10 min. at 1200 C while the continuous nitride layer is still amorphous.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Bourguet, P., Dupart, J.M., Tiran, E.Le, Auvray, P., Guivarc'h, A., Salvi, M., Pelous, G., and Henoc, P., J. Appl. Phys. 51 6169 (1980).CrossRefGoogle Scholar
2 Zimmer, G., and Vogt, H., IEEE Trans. Electron Devices, ED-30, 11 (1983).Google Scholar
3 Fung, CD., Kiao, J.L., Elsayed, K.R., and Kopanski, J.J., Proc. Symp. Silicon Nitride Thin Insulating Films, 83-8 Electrochemical Society 403 (1983).Google Scholar
4 Hemment, P.L.F., SPIE 530, ‘Adv. Appl. Ion Implantation230 (1985).CrossRefGoogle Scholar
5 Chang, P.H., Slawinski, C., Mao, B.-Y., and Lam, H.W., J. Appl. Phy. 61(1) 166 (1987).CrossRefGoogle Scholar
6 Belz, J., Kaat, E.H. Te, Zimmer, G. and Vogt, H., Nucl. Instr. and Meth. in Physics Research, B19/20 279 (1987).CrossRefGoogle Scholar
7 Nesbit, L.S., Stiffler, S., Slusser, G. and Vinton, H., J. Electrochem. Soc: Solid State Science and Technology 132, 2713 (1985).CrossRefGoogle Scholar
8 Datye, A.K., Tsao, S.S. and Myers, D.R., Proc. Annu. Meet. Electr. Microsc. Soc. Amer., Bailey, G.W. ed., San Francisco Press, 1986 p. 734.Google Scholar
9 Kaushik, V.S., Datye, A.K., Martinez-Tovar, B., Kendall, D.L. and Myers, D.R. submitted to Appl. Phys. Lett.Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 6 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 25th February 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Formation of Buried Nitride Layers in (110) Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Formation of Buried Nitride Layers in (110) Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Formation of Buried Nitride Layers in (110) Silicon
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *