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Formation Kinetics of Thermal Donors in Silicon*

Published online by Cambridge University Press:  28 February 2011

Jeffrey T. Borenstein ,
David Peak  and
James W. Corbett
Jeffrey T. Borenstein
Affiliation:
Physics Department, SUNY/Albany, Albany NY 12222, USA.
David Peak
Affiliation:
Physics Dept., Union College, Schenectady NY 12308, USA.
James W. Corbett
Affiliation:
Physics Department, SUNY/Albany, Albany NY 12222, USA.
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Abstract

The kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a simple model based on the work of Suezawa and Sumino which derives forward and reverse reaction rates for each electrically active species from the general features of the infrared electronic absorption spectra. The model, which is independent of the chemical nature of the thermal donor core, assumes that all thermal donors beyond the first donor species are chemically stable at the donor formation temperature, and approximates the reactions for species smaller than the first thermal donor as being in chemical equilibrium. The model is shown to be consistent with both sets of the available IR spectra of thermal donors (Oeder-Wagner and Suezawa-Sumino) when differences in the annealing temperature and initial oxygen concentration are taken into account.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 173
Copyright
Copyright © Materials Research Society 1986

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Footnotes

*

Supported in part by the DOE-JPL Flat-Plate Solar Array Project, the U.S.A.R.O., and the Mobil Foundation.

References

REFERENCES

* Supported in part by the DOE-JPL Flat-Plate Solar Array Project, the U.S.A.R.O., and the Mobil Foundation.Google Scholar
1. Fuller, C.S., Ditzenberger, N.B., Hannay, N.B. and Buehler, E., Phys. Rev. 96 (1954) 833.Google Scholar
2. Kaiser, W., Frisch, H.L. and Reiss, H., Phys. Rev. 112 (1958) 1546.CrossRefGoogle Scholar
3. Corbett, J.W., McDonald, R.S. and Watkins, G.D., J. Phys. Chem. Solids 25 (1964) 873.Google Scholar
4. Gaworzewski, P.–and Schmalz, K., Phys. Stat. Sol. A 55 (1979) 699.CrossRefGoogle Scholar
5. Pajot, B., Compain, H., Lerouille, J. and Clerjaud, B., Physica 117B and 118B (1983) 110.Google Scholar
6. Oeder, R. and Wagner, P., Defects in Semiconductors II, eds. Mahajan, S. and Corbett, J.W. (North Holland: New York, 1983) p. 107.Google Scholar
7. Suezawa, M. and Sumino, K., Phys. Stat. Sol. A 82 (1984) 235.Google Scholar
8. Ourmazd, A., Schröter, W. and Bourret, A., J. Appl. Phys. 56 (1984) 1670.Google Scholar
9. Waite, T.R., J. Chem. Phys. 28 (1958) 103.CrossRefGoogle Scholar
10. Stavola, M., Patel, J.R., Kimerling, L.C. and Freeland, P.E., Appl. Phys. Lett. 42 (1983) 73.CrossRefGoogle Scholar
11. Lindström, J.L., Svensson, B. and Corbett, J.W., in press.Google Scholar
12. Corbett, J.W., Frisch, H.L. and Snyder, L.C., Mater. Letters 2 (1984) 209.Google Scholar
13. Borenstein, J.T. and Corbett, J.W., this volume.Google Scholar
14. Sahu, S.N., private communication.Google Scholar
15. Peak, D. and Corbett, J.W., Rad. Eff. 36 (1978) 197.CrossRefGoogle Scholar
16. Oehrlein, G.S., Lindström, J.L. and Cohen, S.A., in Thirteenth International Conference on Defects in Semiconductors, eds. Kimerling, L.C. and Parsey, J.M. Jr., (Metallurgical Soc. of AIME: Coronado, Calif., 1984),p. 701.Google Scholar