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Fabrication Of Flat RF MEMS Switch Membrane By Minimizing Of Stress Gradients In The Au Membrane Structure

Published online by Cambridge University Press:  11 February 2011

Jong-Seok Kim
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Hoon Song
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Jin Woo Cho
Affiliation:
CSE Center, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742
Eun Sung Lee
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Sun Hee Park
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Mun Chul Lee
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Dong Hwa Shim
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
In Sang Song
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Jung Woo Kim
Affiliation:
MD Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742
Seok Jin Kang
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
Ki Moo Song
Affiliation:
ME Center, MEMS Laboratory, Samsung Advanced Institute Of Technology, 416, Mae-tan 3 dong, Pal-dal-gu, Su-won city, Korea 442–742, E-mail : kjs10000@samsung.co.kr
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Abstract

RF MEMS(Micro-Electro-Mechanical-System) switch technology is one of powerful solution for future RF systems. This technology provides low insertion loss, High linearity and broad bandwidth. Wide driving membrane used MEMS switch can reduce driving voltage but it is easy to bend because of the stress gradient. In order to solve this problem we fabricated Au cantilever in various sputtering condition and various substrate materials. As a result of this experiment, we fabricated cantilever which was bent within 1 um, with 2 um thickness and 340 um length. We applied this condition to RF MEMS switch and we fabricated switch membrane within 1 um bend, under 10MPa stress gradient.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

[1] Maluf, N., “An Introduction to micro-mechanical systems engineering”. Norwood, MA: Artech House, 2000, CH. 1.Google Scholar