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Excimer Laser Interactions with Ptfe Relevant to thin Film Growth

Published online by Cambridge University Press:  22 February 2011

J.T. Dickinson ,
M.G. Norton ,
J.-J. Shin ,
W. Jiang  and
S.C. Langford
J.T. Dickinson
Affiliation:
Washington State University, Pullman, WA 99164-2814
M.G. Norton
Affiliation:
Washington State University, Pullman, WA 99164-2814
J.-J. Shin
Affiliation:
Washington State University, Pullman, WA 99164-2814
W. Jiang
Affiliation:
Washington State University, Pullman, WA 99164-2814
S.C. Langford
Affiliation:
Washington State University, Pullman, WA 99164-2814
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Abstract

Recently, thin films of polytetrafluroethylene (PTFE) have been grown using pulsed laser ablation of TeflonTM at 266 nm.1,2 To provide further insight into the growth mechanisms we have examined the neutral and charged particle emissions generated in vacuum by 0 - 3 J/cm2 pulses of 248 nm radiation incident on solid PTFE. Measurements include quadrupole and time-of-flight mass spectroscopy. We find in addition to the neutral monomer (C2F4), copious emissions of highly reactive neutral and charged radicals, e.g., CF2, CF3, CF, F, and Cx. A careful analysis of the fluence dependence of these products provides definitive evidence that their precursors are generated by a thermally driven unzipping reaction. Models for the production of the radical species with the observed energies (several eV) involving gas phase processes are presented. Implications for improving PTFE thin film growth will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 359
Copyright
Copyright © Materials Research Society 1994

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