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Evolution of Coherent InAs Quantum Dots Above the Coherent Critical Thickness Window by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

T. S. Yeoh
Affiliation:
Semiconductor Laser Laboratory, University of Illinois at Urbana-Champaign 208 N. Wright Street, Urbana, IL 61801, U.S.A.
C. P. Liu
Affiliation:
National Cheng Kung University Tainan, TAIWAN.
Y. W. Kim
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign 104 S. Goodwin Ave. Urbana, IL 61801, Urbana, IL.
J. J. Coleman
Affiliation:
Semiconductor Laser Laboratory, University of Illinois at Urbana-Champaign 208 N. Wright Street, Urbana, IL 61801, U.S.A.
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Abstract

InAs quantum dots were grown on GaAs substrates at various coverages and capped after varying the time of growth interruption. The evolution of this system was examined by correlating photoluminescence and transmission electron microscopy measurements. Results show for the first time the growth interruption to be a critical factor in generating defect-free quantum dot ensembles at coverages well above established metalorganic chemical vapor deposition coverage window for defect-free, Stranski-Krastanow self-organized growth. In addition, our results also support the absence of a stable, dislocation free 3D state and that the chemical potential eventually drives the system towards dislocated quantum dot clusters.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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Evolution of Coherent InAs Quantum Dots Above the Coherent Critical Thickness Window by Metalorganic Chemical Vapor Deposition
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