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Eutectic Bonding for Inducing In-Plane Strain in Gaas and Gaas/Algaas MQW Thin Films

Published online by Cambridge University Press:  25 February 2011

Y. Lu ,
H. C. Kuo ,
C. H. Lin ,
H. Shen ,
F. Ren ,
M. Wraback ,
J. Pamulapati ,
M. Taysing-Lara ,
M. Dutta  and
J. M. Kuo
Y. Lu
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
H. C. Kuo
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
C. H. Lin
Affiliation:
Rutgers University, Department of Electrical and Computer Engineering, Piscataway, New Jersey 08855-0909
H. Shen
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
F. Ren
Affiliation:
AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
M. Wraback
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
J. Pamulapati
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
M. Taysing-Lara
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
M. Dutta
Affiliation:
U.S. Army Research Laboratory, Electronics and Power Sources Directorate AMSRL-EP-EF, Fort Monmouth, New Jersey 07703-5601
J. M. Kuo
Affiliation:
AT&T Bell Laboratory, 600 Mountain Avenue, Murray Hill, NJ 07974-2070
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Abstract

We present a process for creating in-plane anisotropic strain in (100) GaAs and GaAs/AlGaAs multiple quantum well (MQW) thin films. The host substrates used for bonding include (100) GaAs, (100) silicon, and lithium tantalate (LiTaO3) with a special crystalline orientation. A mutilayer metallization consisting of Au-Sn (Au: 80 wt% , Sn: 20 wt%, 0.95μm), Ti (500Å) adhesion layer and Pt (500Å) barrier layer is deposited on the thin films and the host substrates. By choosing a proper annealing temperature (380°C) and thickness of eutectic layer, the thin films and the substrates are bonded together. Photoluminescence measurements do not reveal any thermally induced strain in the thin films bonded to GaAs; however, they show the existence of in-plane biaxial strain in the films bonded on Si. Linearly polarized reflectance measurements reveal an optical anisotropy in the MQW bonded to LiTaO3, which possesses an orientation-dependent thermal expansion. This indicates that the in-plane strain in the thin films is induced by the different thermal expansions between the thin films and the substrates. This process can be used to develop a new class of devices with an artificially induced in-plane strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 607
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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