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Etching and Surface Modification of Polymers in CF4/O2 Plasma Discharges

Published online by Cambridge University Press:  21 February 2011

P. M. Scott ,
S. V. Babu ,
R. E. Partch  and
L. J. Matienzo
P. M. Scott
Affiliation:
Department of Chemical Engg, Clarkson Univ., Potsdam, NY 13676
S. V. Babu
Affiliation:
Department of Chemical Engg, Clarkson Univ., Potsdam, NY 13676
R. E. Partch
Affiliation:
Department of Chemistry, Clarkson Univ., Potsdam, NY 13676
L. J. Matienzo
Affiliation:
IBM Corporation, Systems Technology Division, Endicott, NY 13760
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Abstract

Some results of simultaneous measurement of polyimide etch rates, temperature, and O− and F− atom emission intensities in CF4/O2 plasma discharges are described. Several process variables have been investigated both during steady and unsteady plasma reactor operation. Atomic compositions on the polymer surface have been determined as a function of time of exposure to the plasma using ESCA, and the C IS spectra apalyzed to identify the various C-O and C-F bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 207
Copyright
Copyright © Materials Research Society 1988

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Footnotes

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Current address: IBM Corporation, Owego, NY 13827

References

REFERENCES

1.Thompson, L. F., Willson, C. G., and Bowden, M. J., (Editors), “Introduction to Microlithography”, (American Chemical Society, Washington, D.C., 1983).Google Scholar
2. See for example, Pilz, W., Sponholz, T., Pongratz, S. and Mader, H., Microelectronic Engg. 3, 467 (1985).Google Scholar
3.Cantwell, D., Printed Circuit Fabrication, Dec. 1983 and Jan. 1984.Google Scholar
4.Moss, S. J., Polym. Degrad. Stab., 17, 205 (1987).Google Scholar
5.Battey, J. F., IEEE Trans. Electron Dev., ED–24, 140 (1977), J. Electrochem. Soc., 124, 437 (1977).Google Scholar
6.Cook, J. M., Hannon, J. J. and Benson, B. W., in Sixth Int. Symposium Plasma Chem. p. 616 (Montreal, 1983).Google Scholar
7. See for example, Turban, G. and Rapeaux, M., J. Electrochem. Soc., 130, 2231 (1983).Google Scholar
8.Egitto, F. D., Vukanovic, V., Emmi, F., and Horwath, R. S., J. Vac. Sci. Technol. B3, 893 (1985).Google Scholar
9.Dedinas, J., Feldman, M. M., Mason, M. G., and Gerenser, L. J., in Proceedings of the First Int. Conf. Plasma Chem. Tech., p. 119, Boenig, H. (Editor), (Technomic Press, Lancaster, Penn. 1983); T. Yagi, A. E. Pavlath, and A. G. Pittman, J. App. Poly. Sci., 27, 4019 (1982); and M. Anand, R. Cohen, and R. F. Baddour, Polymer, 22, 361 (1981).Google Scholar
10. See for example, L.FI~ama, D. and Donnelly, V. M., Plasma Chem. Plasma Process 1, 317 (1981) and references cited there.Google Scholar
11.Babu, S. V., Tiemann, L. A., and Partch, R. E., in 7th Int. Symp. Plasma Chem. p. 1025 (Eindhoven, 1985).Google Scholar
12.d'Agostino, R., Cramarossa, F., Benedictis, S.de and Ferraro, G., J. App. Phys., 52, 1259 (1983).Google Scholar
13.Scott, P. M., M. S. Thesis (Clarkson University, 1987).Google Scholar
14.Scott, P. M., Babu, S. V., Partch, R. E. and Matienzo, L. J., (to be published).Google Scholar
15.Srinivasan, V., Sivasubramanian, M. S., and Babu, S. V., in 7th Int. Sym. Plasma Chem., Proceedings, p. 1405 (Eindhoven, 1985).Google Scholar