Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T05:14:38.010Z Has data issue: false hasContentIssue false
  • English
  • Français

Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System

Published online by Cambridge University Press:  21 February 2011

A.R. Peaker ,
H. Efeoglu ,
J.M. Langer ,
A.C. Wright ,
I. Poole  and
K.E. Singer
A.R. Peaker
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, UMIST, Manchester, M60 1QD, England
H. Efeoglu
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, UMIST, Manchester, M60 1QD, England
J.M. Langer
Affiliation:
Institute of Physics, Polish Academy of Science, Al Lotnikow 32/46, Warsaw 02668, Poland
A.C. Wright
Affiliation:
Advanced Materials Laboratory, North East Wales Institute, Connah's Quay, Wales
I. Poole
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, UMIST, Manchester, M60 1QD, England
K.E. Singer
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, UMIST, Manchester, M60 1QD, England
Get access

Abstract

The growth of erbium doped gallium arsenide by MBE at normal substrate temperatures (∼580°C) is constrained by a solubility limit of 8×1017 cm−3. This is much less than is desirable for optical emitters using the forbidden 4f transitions of Er3+ to produce radiation at 1.54μm. We have developed an MBE technique where it is possible to produce spherical mesoscopic precipitates containing erbium as a matrix element within the gallium arsenide. Structural and analytical studies indicate that the precipitate is cubic (rock salt) erbium arsenide. The physical size of the precipitates is self limiting as a result of surface migration occurring during MBE growth. By adjusting the growth conditions it is possible to produce an array of uniform erbium arsenide quantum dots of a size chosen from the range 10-20Å. The dot density can be varied by changing the erbium flux.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 337
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Bantien, F., Bauser, E. and Weber, J., J. Appl. Phys. 61, 2803 (1987).Google Scholar
2 Klein, P.B., Moore, F.G. and Dietrich, H.B., Appl. Phys. Lett. 58, 502 (1991).Google Scholar
3 Uwai, K., Nakagome, H. and Takahei, K., J. Crystal Growth 93, 583 (1988).Google Scholar
4 Smith, R.S., Muller, H.D., Ennen, H., Wennekers, P. and Maier, M., Appl. Phys. Lett. 5049 (1987)Google Scholar
5 Galtier, P., Charasse, M.N., Chazelas, J., Huber, A.M., Grattepain, C., Siejka, J. and Hirtz, J.P., Inst. Phys. Conf. Ser. 96, 61 (1988).Google Scholar
6 Poole, I., Efeoglu, H., Singer, K.E. and Peaker, A.R. to be published J. Crystal Growth 1993 (Proceedings of MBE-VII 1992)Google Scholar
7 Selected Values of the Thermodynamic Properties of the Elements, Ed. Hultgren, R. (American Society for Metals, New York 1973) p. 168.Google Scholar
8 Gupta, S., Sethi, S. and Battacharya, P.K., Appl. Phys. Lett. 62, 1128 (1993).Google Scholar
9 Efeoglu, H., Evans, J.H., Jackman, T.E., Hamilton, B., Houghton, D.C., Langer, J.M., Peaker, A.R., Perovic, D., Poole, I., Ravel, N., Hemment, P. and Chan, C.W., Semicond. Sci Technol. 8, 236 (1993).Google Scholar