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Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

Published online by Cambridge University Press:  26 February 2011

J. S. Custer
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853 FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
Michael O. Thompson
Affiliation:
Dept. of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
D. J. Eaglesham
Affiliation:
T Bell Laboratories, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
T Bell Laboratories, Murray Hill, NJ 07974
J. M. Poate
Affiliation:
T Bell Laboratories, Murray Hill, NJ 07974
J. R. Liefting
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
F. W. Saris
Affiliation:
FOM Institute for Atomic and Molecular Physics, 1098 SJ Amsterdam, the Netherlands
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Abstract

The competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impurities, solid phase epitaxy proceeds with small deviations from the intrinsic rate and with the impurity remaining in the shrinking amorphous layer. At a critical metal concentration in the amorphous layer of ∼ 0.12 at.% rapid random nucleation occurs, halting epitaxy and transforming the remaining amorphous material to polycrystalline Si via grain growth. The nucleation rate is at least 8 orders of magnitude greater than the intrinsic homogeneous rate. At higher Cu concentrations nucleation is observed below the temperature needed for epitaxy (400°C). This nucleation, clearly caused by the presence of Cu or Ag in the layer, may be induced by the impurities exceeding the absolute stability concentration and starting to phase separate, leading to enhanced crystal Si nucleation in the metal rich regions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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