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Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

Published online by Cambridge University Press:  21 February 2011

R.D. Vispute
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7916.
H. Wu
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7916.
K. Jagannadham
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7916.
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7916.
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Abstract

AIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 1 10]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition
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