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Epitaxial Growth of AlN on 3C-SiC and Al2O3 Substrates

Published online by Cambridge University Press:  25 February 2011

B. S. Sywe ,
Z. J. Yu  and
J. H. Edgar
B. S. Sywe
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102.
Z. J. Yu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102.
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102.
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Abstract

A1N films were grown on the (100) plane of 3C-SiC/Si and the (0001) plane of A12O3 substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMA) and ammonia (NH3) as the precursors. The deposited films were characterized by X-ray diffraction (XRD) and a Read thin film camera. At 1150°C, preferentially oriented polycrystalline AlN films were obtained on both substrates and the crystal structure was wurtzite. The epitaxial relations were (1010)AlN//(100)SiC//(100)Si and (0001)AlN// (0001)Al2O3. The attempt to grow cubic AlN on 3C-SiC/Si was not successful.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 463
Copyright
Copyright © Materials Research Society 1992

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