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The Epitaxial Growth of Al on Hydrogen Terminated Si(100) Substrates with and Without Ion Bombardment
Published online by Cambridge University Press: 25 February 2011
Abstract
We have demonstrated that aluminum can be grown epitaxially on H-terminated Si(100) substrates under modest vacuum conditions using thermal deposition. The effect of 1 keV to 4 keV ion bombardment during deposition was found to be either minimal or detrimental. Preliminary results from sputter-deposited Al films show very different behavior, with the films tending to relax from the epitaxial (110) texture to a (111) texture.
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- Copyright © Materials Research Society 1992