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Epitaxial Deposition of 3C-SiC on Si Using Unconventional Sputtering of a Hollow Cathode

Published online by Cambridge University Press:  01 February 2011

James L Huguenin-Love ,
Rodney J Soukup ,
Natale J Ianno  and
Nole T Lauer
James L Huguenin-Love
Affiliation:
enmma@msn.com, University of Nebraska, Department of Electrical Engineering, Lincoln, Nebraska, United States
Rodney J Soukup
Affiliation:
rsoukup@unl.edu, University of Nebraska, Department of Electrical Engineering, Lincoln, Nebraska, United States
Natale J Ianno
Affiliation:
nianno@unl.edu, University of Nebraska, Department of Electrical Engineering, Lincoln, Nebraska, United States
Nole T Lauer
Affiliation:
NoelLauer@netscape.net, University of Nebraska, Department of Electrical Engineering, Lincoln, Nebraska, United States
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Abstract

Epitaxial 3C-SiC was grown using an unconventional technique for epitaxial growth. Thin films of 3C-SiC were deposited onto the (111) and (110) faces of Si using pulsed DC sputtering of a high purity, hollow cathode SiC target. The films were studied using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), and auger electron spectroscopy (AES) techniques. XRD results presented as Bragg diffraction spectra and pole figures, and electron diffraction patterns verify crystal orientation and epitaxy. In addition, AES profiles identify the compositional integrity of the deposited films.

Keywords

sputteringepitaxyx-ray diffraction (XRD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B07-17
Copyright
Copyright © Materials Research Society 2010

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