Skip to main content Accessibility help
×
Home
Hostname: page-component-7ccbd9845f-z5z76 Total loading time: 0.173 Render date: 2023-01-30T03:03:31.460Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Enhancement of STT-RAM Characteristics by Wet Clean Treatment after MTJ Etch Process

Published online by Cambridge University Press:  02 August 2012

Jung Nam Kim
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Choon Kun Ryu
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Hong Ju Suh
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Bo Kyung Jung
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Soon Ju Lee
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Chang Hyup Shin
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Won Joon Choi
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Jae Sung Roh
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Sung Ki Park
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Get access

Abstract

The effect of wet chemical treatment on the magnetic tunneling junction (MTJ) was examined. The tunneling magneto-resistance (TMR) increased and the resistance of anti-parallel state and parallel state decreased when a wet cleaning treatment was carried out after a reactive ion etching process. Furthermore, the exfoliation between the capping layer and Inter layer Dielectric (ILD) was prevented. Presumably, these were due to the elimination of the damaged layer and the residues. This investigation showed that the wet treatment after the MTJ patterning using RIE process could improve the MTJ properties without degradation of Hc, such as TMR and Rlow.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Daughton, J.M, Thin Solid Films, 216, 162168 (1992)10.1016/0040-6090(92)90888-ICrossRefGoogle Scholar
2. Song, Y.S., Electrochem. Solid-State Lett., 7, C64 (2004)10.1149/1.1652423CrossRefGoogle Scholar
3. Kinisguta, K., Jpn. J. Appl. Phys. 49,08JB02 (2010)Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Enhancement of STT-RAM Characteristics by Wet Clean Treatment after MTJ Etch Process
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Enhancement of STT-RAM Characteristics by Wet Clean Treatment after MTJ Etch Process
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Enhancement of STT-RAM Characteristics by Wet Clean Treatment after MTJ Etch Process
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *