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Enhancement of STT-RAM Characteristics by Wet Clean Treatment after MTJ Etch Process

Published online by Cambridge University Press:  02 August 2012

Jung Nam Kim
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Choon Kun Ryu
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Hong Ju Suh
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Bo Kyung Jung
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Soon Ju Lee
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Chang Hyup Shin
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Won Joon Choi
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Jae Sung Roh
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
Sung Ki Park
Affiliation:
R&D Division, SK hynix Semiconductor Incorporated, Icheon-si, Kyoungki-do, 467-701, Korea
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Abstract

The effect of wet chemical treatment on the magnetic tunneling junction (MTJ) was examined. The tunneling magneto-resistance (TMR) increased and the resistance of anti-parallel state and parallel state decreased when a wet cleaning treatment was carried out after a reactive ion etching process. Furthermore, the exfoliation between the capping layer and Inter layer Dielectric (ILD) was prevented. Presumably, these were due to the elimination of the damaged layer and the residues. This investigation showed that the wet treatment after the MTJ patterning using RIE process could improve the MTJ properties without degradation of Hc, such as TMR and Rlow.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

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