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The Energy Band Structures of Cd1-xZnx Te Polycrystalline Thin films and their Applications for Photovoltaic Devices

Published online by Cambridge University Press:  11 February 2011

Zheng Jiagui
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Feng Lianghuan*
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Shao Ye
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Cai Yaping
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Zhang Jingquan
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Cai Wei
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Wu Liii
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Cai Daoiin
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Len Wenjian
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
Zhu Jumu
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064. P.R. China
*
* Corresponding author E-mail dress: lfeng54@hotmail.com
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Abstract

In the paper, Cd1-xZnxTe polycrystalline films have been prepared by co-evaporation, which can control the zinc content, using CdTe and ZnTe as the evaporation sources. The cubic phase in these films as-deposited and annealed has been demonstrated by XRD. The XRD peaks of Cd1-xZnxTe films are always between the corresponding peaks of CdTe and ZnTe. According to Vegard Formula, x values of Cd1-xZnxTe films have been confirmed from XRD data, which shows that both the calculated and experimental x values are almost identical. The optical transmission of Cd1-xZnxTe films has been measured, and the optical energy gaps have been calculated from the transmission. The band gaps vary in a quadratic way with x values, and increase with annealing temperatures. When application of Cd1-xZnxTe film as a buffer of around 80nm thick in CdS/CdTe solar cells, the structure of the cells becomes CdS/CdTe / Cd1-xZnxTe / ZnTe:Cu and their average conversion efficiency is improved by 40% where x is in the range of 0.55 to 0.65. The mentioned above results are discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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