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Electronic Properties of n-type AlXGa1-XAs Alloys

Published online by Cambridge University Press:  11 February 2011

A. Ferreira da Silva ,
I. Pepe ,
H. Haratizadeh ,
P.O. Holtz ,
C. Persson ,
R. Ahuja ,
J. Souza de Almeida  and
A.G. de Oliveria
A. Ferreira da Silva
Affiliation:
Instituto de Fisica, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210–340 Salvador, Ba, Brazil
I. Pepe
Affiliation:
Instituto de Fisica, Universidade Federal da Bahia, Campus Universitario de Ondina, 40 210–340 Salvador, Ba, Brazil
H. Haratizadeh
Affiliation:
Department of Physics and Measurement Technology (IFM), Linköping University, SE-581 83 Linköping, Sweden
P.O. Holtz
Affiliation:
Department of Physics and Measurement Technology (IFM), Linköping University, SE-581 83 Linköping, Sweden
C. Persson
Affiliation:
Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
R. Ahuja
Affiliation:
Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
J. Souza de Almeida
Affiliation:
Condensed Matter Theory Group, Department of Physics, Uppsala University, SE-751 21 Uppsala, Sweden
A.G. de Oliveria
Affiliation:
Departamento de Fisica-ICEX, Universidade Federal de Minas Gerais, 30123–970 Belo Horizonte, MG, Brazil
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Abstract

We have investigated, theoretically and experimentally, the reduced and optical bandgap shift of Si-doped AlXGa1-XAs alloys as a function of both the Al composition and the Si concentration. The calculations were carried out within a framework of the many particle random phase approximation with the Hubbard local-field correction, considering electron populations in the conduction minima located at the Γ, X and L-points of the Brillouin zone. The experimental data have been obtained by means of photoluminescence spectroscopy. The theoretical predictions are found to be in good agreement with the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.10
Copyright
Copyright © Materials Research Society 2003

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References

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