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Electron Speckle and Higher-Order Correlation Functions from Amorphous Thin Films

Published online by Cambridge University Press:  10 February 2011

J. Murray Gibson
Affiliation:
University of Illinois, Department of Physics, 1110 W Green St, Urbana, IL 61801
M. M. J. Treacy
Affiliation:
NEC Research Institute, 4 Independence Way, Princeton, NJ 08540
D. Loretto
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

We obtain valuable information about medium-range order in amorphous semiconductors from variable coherence microscopy, a new quantitative approach to TEM. The technique reveals three-body and higher-order atomic correlation functions, which are sensitive to medium-range order. Preliminary experimental evidence for structural changes on annealing has been found for amorphous semiconductor films, with pronounced medium-range order seen only in unannealed films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Cusack, N.E., The Physics of Structurally Disordered Matter (Adam Hilger, Bristol, U.K., 1987).Google Scholar
2. Moss, S.C. and Graczyk, J.F., Phys. Rev. Lett. 23, 1167 (1969).Google Scholar
3. Etherington, G., Wright, A.C., Wenzel, J.T. et ai, J. Non-Cryst. Sol. 48, 265 (1982).Google Scholar
4. Temkin, R.J., Paul, W., and Connell, G.A.N., Adv. Phys. 22, 581 (1973).Google Scholar
5. Zachariasen, W.H., J. Am. Chem. Soc. 54, 3841 (1932).Google Scholar
6. Bell, R.J. and Dean, P., Nature 212, 1354 (1966).Google Scholar
7. Polk, D.E., J. Non-Cryst. Sol. 5, 365 (1971).Google Scholar
8. Schevchik, N.J. and Paul, W., J. Non-Cryst. Sol. 8–10, 381 (1972).Google Scholar
9. Wooten, F., Winer, K., and Wearie, D., “Computer Generation of Structural Models of Amorphous Si and Ge,” Phys. Rev. Lett. 54, 13921395 (1985).Google Scholar
10. Nemanich, R. J., Solin, S.A., and Lucovsky, G., Sol. State Comm. 21, 273 (1977).Google Scholar
11. Elliot, S.R., “Origin of the First Sharp Diffraction Peak in the Structure Factor of Covalent Glasses,” Phys. Rev. Lett. 67, 711714 (1991).Google Scholar
12. Treacy, M.M.J. and Gibson, J.M., “Variable Coherence Microscopy: a Rich Source of Structural Information from Disordered Materials,” Acta Cryst. A 52, 212 – 220 (1996).Google Scholar
13. Phillips, J.C., J. Non-Cryst. Sol 43, 37 (1981).Google Scholar
14. Filipponi, A., Evangelisti, F., Benefatto, M. et al., “Structural investigation of a-Si and a-Si:H using x-ray absorption spectroscopy at the Si K edge,” Phys. Rev. B 40, 96369643 (1989).Google Scholar
15. Rudee, M.L. and Howie, A., Phil. Mag. 25, 1001 (1972).Google Scholar
16. Herd, S. and Chaudhari, P., Phys. Stat. Sol. (a) 26, 627 (1974).Google Scholar
17. Krivanek, O.L., Gaskell, P.H., and Howie, A., Nature 262, 454457 (1976).Google Scholar
18. Fan, G.Y. and Cowley, J.M., Ultramicroscopy 24, 4960 (1988).Google Scholar
19. Cowley, J.M., “Electron Microdiffraction and Microscopy of Amorphous Solids,” in Diffraction Studies on Non-Crystalline Substances (Hungarian Academy of Sciences, 1980).Google Scholar
20. Rodenburg, J.M., “A STEM Technique for quantifying angular correlations in amorphous specimens,” presented at the EMAG '85, Newcastle, U.K., 1985, 78, 103104, Inst. Phys. Conf. Ser.Google Scholar
21. Marks, L.D., Ultramicroscopy 25, 25 (1988).Google Scholar
22. Gibson, J.M., “Breakdown of the WPO in amorphous objects and measurement of HREM optical parameters,” Ultramicroscopy 56, 2631 (1994).Google Scholar
23. Treacy, M. M. J. and Gibson, J. M., J. Microscopy 180, 211 (1995).Google Scholar
24. Pennycook, S. J., “Z-contrast STEM for Materials Science,” Ultramicroscopy 30, 5869 (1989).Google Scholar
25. Warren, B.E., X-Ray Diffraction (Addison-Wesley, Reading, MA, 1959).Google Scholar
26. Biswas, R., Kwon, I., Bouchard, A.M. et al., Phys. Rev. B 39, 5101 (1989).Google Scholar
27. Fortner, J. and Lannin, J.S., “Structural Relaxation and order in ion-implanted Si and Ge,” Phys. Rev. B 37, 1015410158 (1988).Google Scholar
28. Fortner, J. and Lannin, J.S., “Structural Relaxation and order in ion-implanted Si and Ge,” Phys. Rev. B 39, 5527 (1989).Google Scholar