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Electromigration Induced Resistance Changes in Passivated Aluminum Thin Film Conductors

Published online by Cambridge University Press:  21 February 2011

U.E. Möckl ,
J.R. Lloyd  and
E. Arzt
U.E. Möckl
Affiliation:
Max-Planck-Institut für Metallforschung, Institut fuit Werkstoffwissenschaft, Seestrafle 92, 7000 Stuttgart 1, Germany
J.R. Lloyd
Affiliation:
also with Digital Equipment Corporation, 75 Reed Road, Hudson MA 07149-2895
E. Arzt
Affiliation:
Max-Planck-Institut für Metallforschung, Institut fuit Werkstoffwissenschaft, Seestrafle 92, 7000 Stuttgart 1, Germany
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Abstract

The relative change in resistance due to electromigration was studied in thin (0.7 μm) film conductors of AI-0.5% Cu Alloy passivated with a 1 μm thick glass passivation using a sensitive AC bridge technique. In contrast to previous experiments performed on unpassivated structures where a roughly linear resistance increase was observed, a saturation value for the resistance increase was observed which was seen to be a function of temperature and the applied current density. The results were found to be consistent with a Shatzkes and Lloyd electromigration model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 301
Copyright
Copyright © Materials Research Society 1993

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