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Electromigration in Thin Films of Au on GaAs

Published online by Cambridge University Press:  21 February 2011

P. F. Tang ,
A. G. Milnes ,
C. L. Bauer  and
S. Mahajan
P. F. Tang
Affiliation:
Department of Electrical & Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213
A. G. Milnes
Affiliation:
Department of Electrical & Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213
C. L. Bauer
Affiliation:
Department of Metallurgical Engineering & Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213
S. Mahajan
Affiliation:
Department of Metallurgical Engineering & Materials Science, Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

Evolution of the fractional change of electrical resistance ΔR/R in thin films of Au on (001) substrates of semi-insulating GaAs has been investigated as a function of time t, temperature T, and current density j. Initially, ΔR/R increases linearly with increasing t for constant T and j, and exponentially with increasing T for constant t and j, characterized by an activation energy of 0.73 eV. An analytical model is developed to evaluate ΔR/R for the early stages of electromigration. This model is based on flux divergence at grain boundary triple junctions resulting from variations of grain boundary inclination and/or diffusivity. Using a Monte Carlo method, conducting lines containing a prescribed number of random triple junctions are simulated, wherein distribution of mass flux divergence determines initial values of ΔR/R. Moreover, by selection of an appropriate failure criterion, the sequence of cumulative failures is characterized by a log-normal-like distribution, which defines mean time to failure and corresponding standard deviation. In general, the model is in good agreement with experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 341
Copyright
Copyright © Materials Research Society 1990

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References

1. d'Heurfe, F. M. and Ho, P. S., Thin films – Interdiffusion and Reactions, Poate, J. M., Tu, K. N. and Mayer, J. W., Eds., John Wiley & Sons, Inc., New York, 1978.Google Scholar
2. Bauer, C. L. and Tang, P. F., Proceedings of the Conference on Metals and Alloys, DIMETA-88, Balatonfured, Hungary, 1988.Google Scholar
3. Bauer, C. L., Tang, P. F., Milnes, A. G. and Mahajan, S., Proc. 4th Int. Conf. on Quality Control in Electronic Components, Bordeaux, France, 1989.Google Scholar
4. Breitling, H. M. and Hummel, R. E., J. Phys. Chem. Solids 33, 845 (1972).Google Scholar
5. Hummel, R. E., Dehoff, R. T. and Geier, H. J., J. Phys. Chem. Solids 37, 73 (1976).Google Scholar
6. LaCombe, D. J. and Parks, E. L., Proc. 23rd Reliability Phys. Sym., IEEE, 1985, p. 74.Google Scholar
7. Blech, I. A. and Kinsborn, E., Thin Solid Films 25, 327 (1975).Google Scholar
8. Klein, B. J., J. Phys. F, Met. Phys. 3, 691s, (1973).Google Scholar
9. Hummel, R. E. and Geier, H. J., Thin Solid Films 25, 335 (1975).Google Scholar
10. Tai, K. L. and Ohring, M., J. Appl. Phys. 48, 36 (1977).Google Scholar
11. Sigbee, R. A., J. Appl. Phys. 44, 2533 (1973).Google Scholar
12. Vaidya, S., Sheng, T. T. and Sinha, A. K., Appl. Phys. Lett., 36, 464 (1980).Google Scholar
13. Cho, J., Thompson, C. V., Appl. Phys. Lett. 54, 2577 (1989).Google Scholar
14. Agarwala, B. N., Attardo, M. J. and Lngraham, A. P., J. Appl. Phys. 41, 3954 (1970).Google Scholar