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Electric-Field-Induced Al2O3/3C-SiC Resistance Memory

Published online by Cambridge University Press:  21 May 2012

Nobuo Yamaguchi
Affiliation:
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
Yoshiyuki Suda
Affiliation:
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Abstract

We propose a new nonvolatile resistance device having a metal/Al2O3/3C-SiC/n-Si/metal metal-insulator-semiconductor (MIS) structure. It is explained that the electron trapping states are generated in the Al2O3/3C-SiC interface region of the 3C-SiC layer due to partial oxidation of the 3C-SiC near the interface, and that the on and off states of the device are caused by trapping and detrapping of electrons in the defect states through the Al2O3 layer. The electron capture in the defect states causes high electric-field in the oxide layer which results in high-rate electron tunneling through the oxide layer and lowering the device resistance. We have previously reported the similar memory behavior with a metal/SiO2/SiO x /3C-SiC/n-Si/metal MIS structure, however the new memory exhibits more enhanced endurance characteristics than those of the previous memory, where the trapped electrons are injected and ejected through the 3C-SiC layer.

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Articles
Copyright
Copyright © Materials Research Society 2012

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References

1. Derbenwick, F. and Brewer, J. E., in Nonvolatile Memory Technologies with Emphasis on Flash, ed. Brewer, J. E. and Gill, M. (John Wiley & Sons, Inc., New Jersey, 2008) p. 617.Google Scholar
2. Suda, Y., Shouji, M., and Takada, K., Appl. Phys. Exp. 1 (2008) 071401.CrossRefGoogle Scholar
3. Shouji, M., Nagashima, T. and Suda, Y., Ext. Abstr. Int. Conf. Solid State Devices and Materials (the Japan Society of Applied Physics, Yokohama, 2006) p. 290.Google Scholar

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