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Electrically Pumped Rare Earth Doped Semiconductor Lasers

Published online by Cambridge University Press:  21 February 2011

Jacques I. Pankove  and
Robert J. Feuerstein
Jacques I. Pankove
Affiliation:
Optoelectronic Computing Systems CenterDepartment of Electrical and Computer EngineeringUniversity of Colorado, Boulder, CO 80309-0425
Robert J. Feuerstein
Affiliation:
Optoelectronic Computing Systems CenterDepartment of Electrical and Computer EngineeringUniversity of Colorado, Boulder, CO 80309-0425
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Abstract

The interest in rare earth (RE) elements as luminescent centers is due to the narrowness and stability of the luminescent transitions. In this paper we review the mechanisms that can be used to electrically excite rare earth impurities in semiconductors: pair recombination energy exchange and impact excitation. The different means of providing energetic electrons for impact excitation are also discussed. We also propose a possible explanation for the temperature dependence of photoluminescence in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 287
Copyright
Copyright © Materials Research Society 1993

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References

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