Published online by Cambridge University Press: 10 February 2011
SrBi2Ta2O9(SBT) films have been prepared by the sol-gel technique on n-Si(100) substrates and nonvolatile memory operation of a metal-ferroelectric-semiconductor field effect transistor (MFSFET) using the SBT/Si structure has been demonstrated. Ploy-crystalline SBT films can be obtained on Si substrates and it is shown by the secondary ion mass spectrometry (SIMS) that the inter-diffusion between SBT and Si is suppressed even though high annealing temperature is required for the SBT film growth. Then the SBT/Si MFSFETs have been fabricated. Drain current - gate voltage characteristics clearly show hysteresis loops due to the ferroelectric nature of the SBT film. It is demonstrated that the drain current can be controlled by the “write” pulse, which was applied before the measurements, even at the same “read” gate voltage. Memory retention characteristics of SBT/Si MFSFETs are also presented.
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