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Electrical and Optical Properties of Si+ and P+ Implanted InP:Fe

Published online by Cambridge University Press:  26 February 2011

Honglie Shen
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Genqing Yang
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Zuyao Zhou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Guanqun Xia
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
Shichang Zou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050, China
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Abstract

Dual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

1. Christel, L.A. and Gibbons, J.F., J. Appl. Phys. 52, 5050 (1981).Google Scholar
2. Heckingbottom, R. and Ambridge, T., Radiation Effects, 17. 31 (1973).Google Scholar
3. Inada, T., Kato, S., and Ohkubo, T., Radiation Effects, 48, 91 (1980).Google Scholar
4. Choudhurg, A.N.M.M. and Armiento, C.A., Appl. Phys. Lett. 50, 448 (1987).Google Scholar
5. Hyuga, F., Yamazaki, H., Watanabe, K., and Osaka, , Appl. Phys. Lett. 50. 1592 (1987).Google Scholar
6. Wang, Kou-Wei, Appl. Phys. Lett. 51, 2127 (1987).Google Scholar
7. Farley, C.W., Kim, T.S., and streetman, B.G., J Electron. Mater. 16. 79 (1987).Google Scholar
8. Baumann, G.G., Benz, K.W., and Pilkuhn, N.H., J. Electrochem. Soc. 123. 1232 (1976).Google Scholar
9. Farley, C.W. and Streetman, B.G., J. Electrochem. Soc. 134. 498 (1987).Google Scholar
10. Shen, Honglie, Yang, Genqing, Zhou, Zuyao, and Zou, Shichang, Appl. Phys. Lett. 56, 463 (1990).Google Scholar
11. Kirillov, D., MerZ, J.L., Kalish, R., and Ron, A., Appl. Phys. Lett. 44, 609 (1980).Google Scholar
12. Rao, M.V., J. Appl. Phys. 61, 337 (1987).Google Scholar
13. Bonner, W.A. and Temkin, H., J. Cryst. Growth, 64, 10 (1983).Google Scholar
14. Shen, Honglie, Yang, Genqing, Zhou, Zuyao, and Zou, Shichang, Nuclear Science and Techniques, 1, 113 (1989).Google Scholar
15. Pomrenke, G.S., J. Cryst. Growth, 64, 158 (1983).Google Scholar
16. Von Vechten, J.A., J. Electrochem. Soc. 122. 423 (1975).Google Scholar
17. Klick, C.C. and Schulman, J.H., Solid-state Phys. 5, 100 (1957).Google Scholar