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Elecitrical Properties of Ion Beam Sputtering Grown Epitaxial Yttria Stabilized Zirconia FIlms on Silicon

Published online by Cambridge University Press:  28 February 2011

P. Hesto ,
C. Pellet ,
C. Schwebel ,
E. Dupont-Nivet  and
A.Le Noxaic
P. Hesto
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA D-022, Université Paris-Sud, 91405 Orsay, France
C. Pellet
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA D-022, Université Paris-Sud, 91405 Orsay, France
C. Schwebel
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA D-022, Université Paris-Sud, 91405 Orsay, France
E. Dupont-Nivet
Affiliation:
Service Electronique, CEA/DAM, BP12, 91680 Bruyères-le-Châtel, France
A.Le Noxaic
Affiliation:
Institut d'Electronique Fondamentale, CNRS URA D-022, Université Paris-Sud, 91405 Orsay, France
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Abstract

Yttria stabilized zirconia (YSZ) films have been characterized. The refractive index measured by ellipsometry is about 2.1. The breakdown electric field is greater than 4MV/cm for small area capacitors with a decrease for large area capacitors. This dielectric strength is weakly dependent on the film thickness within the range 0.2-1.lμm. The analysis of the 1MHz C(V) curves by the Terman method leads to a density of interface states of the order of 1012cm−2eV−1 in the middle of the bandgap with an increase near the conduction and the valence bands. The sensitivity of zirconia to the irradiations has been characterized by analysing 1MHz C(V). With or without electric field applied during the irradiations, the Flat-Band voltage shifts are lower for YSZ films than for thermal silicon dioxide films (2 times smaller).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 577
Copyright
Copyright © Materials Research Society 1990

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References

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