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Elastic Properties of Silicate Glass and Spin-On Glass Thin Films

Published online by Cambridge University Press:  21 February 2011

L. Doucet  and
G. Carlotti
L. Doucet
Affiliation:
SGS-THOMSON, 17 Avenue des Martyrs, B P. 217, 38019 Grenoble Cedex, France
G. Carlotti
Affiliation:
Dipartimento di Fisica, Unità INFM, Università di Perugia, Via Pascoli, 06100 Perugia, Italy
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Abstract

The elastic properties of dielectric films used in microelectronics, such as undoped, phosphorous doped and boron-phosphorous doped silicate glass, as well as spin-on glass, have been studied by means of the Brillouin light scattering technique. The phase velocity of both the surface Rayleigh wave and of the longitudinal wave in the film material have been measured and the two independent elastic constants c11 and c44 evaluated. This permitted us to derive the values of the Young’s modulus and of the Poisson’s ratio which are useful quantities for the modelling of the elastic properties of multilevel structures used in electronics. Moreover, the biaxial stress in the films has been measured by the substrate curvature method. This enabled us to study the evolution of the intrinsic stress with time, caused by water adsorption into the films. The evolution of the stress during thermal cycles has been also analyzed and the thermal expansion coefficient of the films estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 215
Copyright
Copyright © Materials Research Society 1995

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References

[1] Rojas, S., Zanotti, L., Borghesi, A., Sassella, A., Pignatel, G.U., J. Vac. Sci. Technol. B 11, 2081 (1993)Google Scholar
[2] Rojas, G., Gomarasca, R., Zanotti, L., Borghesi, A., Sassella, A., Ottaviani, G., Moro, L. and Lazzari, P., J. Vac. Sci. Technol. B 10, 633 (1992)Google Scholar
[3] Chiang, Chien, Neubauer, Gabi, Mack, Anne Sauter, Yoshioka, Ken, Cuan, George, Flinn, Paul A. and Fraser, D. B., Mat. Res. Soc. Symp. Proa, Vol. 265 (MRS, Pittsburgh, 1992) p. 219 Google Scholar
[4] Shintani, Akira, Sugaki, Shojiro and Nakashima, Hisao, J. Appl. Phys. 51, 4297 (1980)Google Scholar
[5] Ambree, P., Kreller, F., Wolf, R. and Wandel, K., J. Vac. Sci. Technol. B 11, 614 (1993)Google Scholar
[6] Nizzoli, F. and Sandercock, J.R., in Dynamical Properties of Solids, edited by Horton, G.K. and Maradudin, A. A. (North-Holland, Amsterdam, 1990), Vol. 6, p 307 Google Scholar
[7] Fioretto, D., Carlotti, G., Palmieri, L., Socino, G. and Verdini, L., Phys. Rev. B 47, 15286 (1993)Google Scholar
[8] Flinn, P.A., Gardner, D.S. and Nix, W. D., IEEE Transact, on Electron Dev., ED–34, 689 (1987); see also P.A. Flinn, in Mater. Res. Soc. Proc. 130, (MRS, Pittsburgh, 1989) p. 41Google Scholar
[9] Farnell, G.W. and Adler, E L., in Physical Acoustics, edited by Mason, W.P. and Thurston, R.N. (Academic, New York, 1972), Vol. 9, p.35 Google Scholar
[10] Hillebrands, B., Lee, S., Stegeman, G.I., Cheng, H., Potts, J.E. and Nizzoli, F., Phys. Rev. Lett. 60, 832 (1988)Google Scholar
[11] Nizzoli, F., Hillebrands, B., Lee, S., Stegeman, G.I., Duda, G., Wegner, G. and Knoll, W., Phys. Rev. B 40, 3323 (1989)Google Scholar
[12] Bhushan, B., Murarka, S.P., Gerlach, T., J. Vac. Sci. Technol. 138, 1068 (1990)Google Scholar
[13] Nassau, K., Levy, R. A., Chadwick, D.L., J. Electrochem Soc. 132, 409 (1985)Google Scholar
[14] Branthley, U.A., J. Appl. Phys. 44, 534 (1973)Google Scholar
[15] Ramkumar, K. and Saxena, N., J. Electrochem. Soc. 139, 1437 (1992)Google Scholar