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Effects of Rapid Thermal Processing on Mbe GaAs on Si

Published online by Cambridge University Press:  25 February 2011

A. Ito
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
A. Kitagawa
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Tokuda
Affiliation:
Aichi Institute of Technology, Yakusa, Toyota 470–03, Japan
A. Usami
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Kano
Affiliation:
Toyota Central Research and Development Laboratory Inc., Nagakute, Aichi 480–11, Japan
H. Noge
Affiliation:
Toyota Central Research and Development Laboratory Inc., Nagakute, Aichi 480–11, Japan
T. Wada
Affiliation:
Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

Variations of electron traps in molecular-beam-epitaxial (MBE) GaAs layers grown on Si substrates by rapid thermal processing (RTP) have been investigated with deep level transient spectroscopy (DLTS). RTP was performed at 760 – 910 °C for 9s with Si02 encapsulant. In contrast with the layer on GaAs, the traps AI(Ec – 0.65eV) and A2(Ec – 0.81eV) are observed in the layer on Si. The trap EL2h, one of the EL2 family, is produced by RTP in the layer on Si. Some GaAs surfaces were etched to prove the deeper region. In the surface region, the concentrartion of EL2h is comparable to that of EL2 produced by RTP in the layer on GaAs. On the other hand, in ∿ 1 μm below the surface, the concentration of EL2h is about ten times as large as that of EL2. It is speculated that the stress from the GaAs/Si interface enhances the production of the EL2h concentration. In addition to the EL2, the traps R1(Ec – 0.23 eV), R2(Ec – 0.40 eV), R3(Ec – 0.43eV) and R4(Ec – 0.56 eV) are produced by RTP in the GaAs grown on Si.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

1. Noge, H., Kano, H., Kato, T., Hashimoto, M. and Igarashi, I., J.Cryst.Growth 83, 431 (1987)CrossRefGoogle Scholar
2. Chand, N., Fisher, R., Sergent, A. M., Lang, D. V., Pearton, S. J. and Cho, A. Y., Appl.Phys.Lett, 51 1013 (1987)CrossRefGoogle Scholar
3. Lord, H. A., IEEE Trasaction on Semiconductor Manufacturing, 1 105 (1988)CrossRefGoogle Scholar
4. Kitagawa, A., Usami, A. and Wada, T., J.Appl.Phys., 65 606 (1989)CrossRefGoogle Scholar
5. Dainippon Screen Engineering of America Inc. Santa Office c/o Prism Technologies Inc. 2620 Augustine Dr. #145 Santa Clara, CA 95045 U.S.AGoogle Scholar
6. Spc Electronics Corporation 2-1-3 Shibasaki, Chofusi, Tokyo 182, JapanGoogle Scholar
7. Tokuda, Y., Shimizu, N. and Usami, A., Jpn.J.Appl.Phys., 18 309 (1979)CrossRefGoogle Scholar
8. Lang, D. V., Cho, A. Y., Gossard, C., Ilegems, M. and Wiegman, W., J. Appl. Phys., 47 2558 (1976)CrossRefGoogle Scholar
9. Blood, P. and Harris, J. J., J.Appl.Phys., 56 993 (1984)CrossRefGoogle Scholar
10. Burns, G. F., Chong, T. C. and Fonstad, C. G., MRS Sym.Proc. 116, 213 (1988)CrossRefGoogle Scholar
11. Nauka, K., Reid, G. A., Ronser, S. J., Koch, S. M. and Harris, J. S., MRS Sym. Proc. 91, 225 CrossRefGoogle Scholar
12. Chand, N., Ren, F., Chu, S. N. G., Sergent, A. M., Bone, T. and lang, D. V., MRS Sym. Proc. 116, 205 (1988)CrossRefGoogle Scholar
13. Martin, G. M., Mitonneau, A. and Mircea, A., Electron.Lett., 13 191 (1977)CrossRefGoogle Scholar
14. Vincent, G., Bois, D. and Chantre, A., J.Appl.Phys., 56 2922 (1984)Google Scholar
15. Kobayashi, Y., Ikeda, K. and Shinoda, Y., Electron.Lett., 26 242 (1987)CrossRefGoogle Scholar
16. Taniguchi, M. and Ikoma, T., Appl.Phys.Lett., 45 69 (1984)CrossRefGoogle Scholar
17. Wager, J. F. and Vechten, J. V. Van., Phys.Rev. B35 2330 (1987)CrossRefGoogle Scholar
18. Wada, K. and Inoue, N., Appl.Phys.Lett., 47 945 (1985)CrossRefGoogle Scholar
19. Kitagawa, A., Usami, A., Wada, T. and Tokuda, Y., J.Appl.Phys., 63 414 (1988)CrossRefGoogle Scholar
20. Katayama, M., Tokuda, Y., Ando, N., Kitagawa, A., Usami, A., Inoue, Y. and Wada, T. SESSION B6.5, MRS Spring Meeting, San Diego, CA, 1989 Google Scholar

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