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Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

Published online by Cambridge University Press:  10 February 2011

X. C. Wang ,
S. J. Chua ,
S. J. Xu  and
Z. H. Zhang
X. C. Wang
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260, Singapore
S. J. Chua
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260, Singapore Institute of Materials Research and Engineering, National University of Singapore, Singapore 119260, Singapore elecsj@nus.edu.sg
S. J. Xu
Affiliation:
Institute of Materials Research and Engineering, National University of Singapore, Singapore 119260, Singapore
Z. H. Zhang
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260, Singapore
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Abstract

In this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 269
Copyright
Copyright © Materials Research Society 2000

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