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The Effects of PtxSi Growth on the Redistribution of P-Type Dopants in Silicon

Published online by Cambridge University Press:  15 February 2011

C. Y. Wei ,
W. Katz  and
G. Smith
C. Y. Wei
Affiliation:
General Electric Corporate Research and Development Center, Schenectady, NY 12301, (U.S.A.)
W. Katz
Affiliation:
General Electric Corporate Research and Development Center, Schenectady, NY 12301, (U.S.A.)
G. Smith
Affiliation:
General Electric Corporate Research and Development Center, Schenectady, NY 12301, (U.S.A.)
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Abstract

The redistribution of p-type dopants (boron and indium) during PtxSi growth was studied as a function of annealing time using secondary ion mass spectrometry. It was found that both boron and indium atoms redistribute into the silicide during a thermal anneal. Initially, the dopant becomes trapped at the PtxSi–Si interface and concomitantly getters to defect sites located at the moving Pt-PtxSi interface. Even after silicide formation is complete, the dopant continues to out-diffuse to the surface via an enhanced mechanism due to defects and/or grain boundaries. Finally, no evidence for a “snowplow” effect was observed for either boron or indium at the implant dose of 2 × 1013 ions cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 215
Copyright
Copyright © Materials Research Society 1982

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References

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