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Effects of Processing on Structural Defects in Silicon*

Published online by Cambridge University Press:  21 February 2011

L. J. Cheng
L. J. Cheng*
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109
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Abstract

It is found that the recombination activities of dislocation complexes and structural defects decorating twin boundaries in as-grown, p-type cast polycrystalline silicon have no observable temperature dependence in the range of 100–300 K, but the activities of these defects in phosphorusdiffused samples decrease with the increase of temperature in the same range. The results suggest that the phosphorus diffusion can cause a significant shift of energy levels of these defects toward the valence band from the middle of the band gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 199
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

The research described in this paper was carried out at the Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the the Solar Energy Research Institute through an interagency agreement with the National Aeronautic and Space Administration.

References

REFERENCES

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