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Effects of Low Level Graded I-Layer Doping on the Stability of A-SI:H Solar Cells

Published online by Cambridge University Press:  21 February 2011

D. Fischer ,
N. Pellaton ,
H. Keppner ,
A. Shah  and
C. M. Fortmann
D. Fischer
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
N. Pellaton
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
H. Keppner
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel, Switzerland
C. M. Fortmann
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
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Abstract

This work reports on attempts to tailor the electric field of a-Si:H solar cells by the graded low-level doping of the intrinsic layer to optimize conversion efficiency in the degraded state. Based on wavelength dependent collection measurements and numerical modeling, the degradation behavior of doped and undoped cells is explained in terms of the interaction of dopants and the light-induced space-charge. Low level doping is shown to shift the electric field away from the p/i interface towards the bulk of the i-layer. This results in a better carrier collection from the back part of the solar cell, and solar cells with improved stabilized red light conversion efficiency can be realized. These cells can be readily applied as bottom cells of stacked solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 887
Copyright
Copyright © Materials Research Society 1992

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References

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