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Effects of Growth Parameters on Surface-morphological, Structural, Electrical and Optical Properties of AZO Films by RF Magnetron Sputtering

Published online by Cambridge University Press:  31 January 2011

Shou-Yi Kuo
Affiliation:
sykuo@mail.cgu.edu.tw, Chang Gung University, Department of Electronic Engineering, 259 Wen-Hwa 1st Road, Kweishan, Taoyuan 333, Taiwan, Tao-Yuan, 33302, Taiwan, Province of China
Wei-Ting Lin
Affiliation:
awleogod@yahoo.com.twsykuo@mail.cgu.edu.tw
Liann-Be Chang
Affiliation:
liann@mail.cgu.edu.tw, Chung-Sung institute of Science & Technology, Chemical Systems Research Division, Tao-Yuan, Taiwan, Province of China
Ming-Jer Jeng
Affiliation:
mjjeng@mail.cgu.edu.tw, Chang Gung University, Department of Electronic Engineering, 259 Wen-Hwa 1st Road, Kweishan, Taoyuan 333, Taiwan, Tao-Yuan, 33302, Taiwan, Province of China
Yong-Tian Lu
Affiliation:
gsykuo@yahoo.com, Chung-Sung institute of Science & Technology, Chemical Systems Research Division, Tao-Yuan, Taiwan, Province of China
Sung-Cheng Hu
Affiliation:
sch7728@seed.net.tw, Chung-Sung institute of Science & Technology, Chemical Systems Research Division, Tao-Yuan, Taiwan, Province of China
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Abstract

500 nm-thick aluminum-doped zinc oxide (ZnO:Al) thin film is usually used as a front transparent conductive oxide (TCO) contact on photovoltaic devices, and for this application is often deposited by a reactive radio-frequency (r.f.) magnetron sputtering system from a ceramic target. This work reports on the preparation and characterization of AZO thin films on Corning 1737 glass substrates grown by reactive r.f.-magnetron sputtering from a ZnO ceramic target with 2 wt% Al content. It was found that the growth parameters, such as chamber pressure, working power, and deposition temperature, have significant influences on the properties of AZO films. According to the experimental results: (1) Films were polycrystalline showing a strong preferred c-axis orientation. (2) With increasing working power, the resistivity decreased, and mobility and the carrier concentration increased. (3) Lower deposition temperature leads to a decrease in resistivity, with 2.5×10-4 Ω-cm representing the lowest resistivity reached.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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