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Effects of Ad-atom Diffusivity Throughout Sb-Mediated Formation of Ge/Si Nanoislands

Published online by Cambridge University Press:  19 April 2012

Alexander A. Tonkikh
Affiliation:
Max Planck Institute of Microstructure Physics, 2 Weinberg, Halle, D-06120, Germany Institute for Physics of Microstructures RAS, Nizhniy Novgorod, GSP-105, Russia
Nikolay D. Zakharov
Affiliation:
Max Planck Institute of Microstructure Physics, 2 Weinberg, Halle, D-06120, Germany
Alexandra A. Suvorova
Affiliation:
Centre for Microscopy, Characterisation and Analysis, the University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
Peter Werner
Affiliation:
Max Planck Institute of Microstructure Physics, 2 Weinberg, Halle, D-06120, Germany
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Abstract

The effect of Sb on the formation of Ge nano islands in Si by means of molecular beam epitaxy is reported. We observe in the Ge/Si(100) system a non-monotonic dependence of the Stranski-Krastanov critical thickness of Ge islands formation on the adsorbed Sb amount. Dome- and hut-shaped Ge islands are replaced with the pyramids, when Ge is deposited on the Sb-covered Si(100) surface. The Sb-mediated conservation of the shape of Ge islands during embedding them in Si is shown. We assume that the decrease of the surface diffusion of Si and Ge ad-atoms causes these effects.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

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