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Effect of Vanadium Ions on the Functional Properties of Nanocrystalline Zinc Oxide

Published online by Cambridge University Press:  07 July 2011

Marco A. Gálvez Saldaña
Department of Physics, University of Puerto Rico at Mayagüez, Mayagüez, Puerto Rico 00980, USA.
Oscar Perales Perez
Department of Engineering Science and Materials, University of Puerto Rico at Mayagüez, Mayagüez, Puerto Rico 00680-9044, USA.
Maxime J-F Guinel
Department of Physics, University of Puerto Rico at Rio Piedras, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 USA.
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A systematic study was carried out to determine the effects of composition and grain size on the structural, optical and magnetic properties of pure ZnO and vanadium-doped ZnO nanocrystalline powders and films in the 0.0 at.% V - 6 at.% V range. The powders and films were synthesized via a sol-gel approach, where ethanolamine was used to increase the viscosity of the precursor solutions and promote the adhesion of the films onto quartz substrates. Powder X-ray diffraction confirmed the formation of ZnO (host oxide) after annealing of the precursors in air. The average grain size in the thin films ranged from 11 nm to 23 nm when the samples were annealed in air for one hour between 450ºC and 550ºC. UV-vis and photoluminescence confirmed the formation of the host oxide. Also, the photoluminescence intensity was found to be strongly dependent on the amount vanadium. Furthermore, it was found that the vanadium concentration and the annealing temperature play an important role in the ferromagnetic behavior of the material.

Research Article
Copyright © Materials Research Society 2011

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[1] Pearton, S.J., Heo, W. H., et al. , Semicond. Sci. Technol, 19 (2004), R59R74.Google Scholar
[2] Kuzma, M., et al. , Journal of Physics: Conference Series 213 (2010) 012035.Google Scholar
[3] Zutic, Igor, et al. , Reviews of Modern Physics, 76, (2004) 323410.Google Scholar
[4] Özgür, Ü., et al. , Journal of Applied Physics, 98, (2005), 041301.Google Scholar
[5] Barnes, T.M., et al. , J. Cryst. Growth, 274 (2005), 412417.Google Scholar
[6] Kang, D.J., et al. , Thin Solid Films 475 (2005) 160165.Google Scholar
[7] Hyun Kim, J., et al. , Journal Applied Physics, 92, (2002), 10.Google Scholar
[8] Petersen, J., Microelectronics Journal 40 (2009) 239241.Google Scholar
[9] Karamat, S., Rawat, R.S., et al. , Applied Surface Science 256 (2010) 23092314.Google Scholar
[10] Cullity, B. D, Element of X-ray Diffractions, Addison Wesley, Reading, MA, 1972, 102.Google Scholar
[11] Wang, Liwei, Meng, Lijian, et al. , Thin Solid Films 517 (2009) 37213725.Google Scholar
[12] Burstein, E., Phys. Rev. 25 (1982) 7826.Google Scholar
[13] Lu, J.J., Lu, Y.M., Tasi, S.I., et al. Optical Materials 29 (2007) 15481552.Google Scholar
[14] Shionoya, S. and Yen, W.M., Phosphor Handbook, CRC Press, Boca Raton, Florida 1999.Google Scholar
[15] Gossard, A. C., et al. , Physical Review B, 9, (1974), 4.Google Scholar
[16] Gossard, A. C., et al. , Physical Review B, 10, (1974), 10.Google Scholar