Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-19T12:27:20.111Z Has data issue: false hasContentIssue false
  • English
  • Français

The Effect of Substrate Surface Orientation and Epilayer Thickness on Ingaas/Gaas Epilayer Tilt and Tilt Direction

Published online by Cambridge University Press:  25 February 2011

J.C.P. Chang  and
K.L. Kavanagh
J.C.P. Chang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093–0407
K.L. Kavanagh
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093–0407
Get access

Abstract

Epilayer tilt about an in-plane axis has been measured for a number of InGaAs/GaAs interfaces grown by solid source molecular beam epitaxy on (001) substrates cut nominally flat or cut 2 degrees towards the <010> or <111> direction. It is found that a much larger tilt develops in epilayers grown on off oriented wafers although a comparable degree of strain was relaxed. The tilt is a function of epilayer thickness for thicknesses exceeding a second critical thickness which we associate with the onset of relaxation by predominantly dislocation multiplication processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 457
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chang, J.C.P., Chen, J., Fernandez, J.M., Wieder, H.H. and Kavanagh, K.L., Appl. Phys. Lett. 60, 1129 (1992).Google Scholar
[2] Kavanagh, K.L., Chang, J.C.P., Chen, J., Fernandez, J.M., and Wieder, H.H., presented at the 19th Physics and Chemistry of Semiconductor Interfaces Conference, Jan. 27, 1992 and to be published in J. Vac. Sci. Technol. 10, August 1992.Google Scholar
[3] Olsen, G.H. and Smith, R.T., Phys. Stat. Sol. (a) 31, 739 (1975).Google Scholar
[4] Ayers, J.E., Ghandhi, S.K., and Schowalter, L.J., J. Cryst. Growth 113, 430 (1991).Google Scholar
[5] Maigne, P. and Roth, A.P., Semicond. Sci. Technol. 7, 1–5 (1992).Google Scholar
[6] Kavanagh, K.L., Capano, M.A., Hobbs, L.W., Barbour, J.C., Maree, P.M.J., Schaff, W., Mayer, J.W., Pettit, D., Woodall, J.M., Stroscio, J.A. and Feenstra, R.M., J. Appl. Phys. 64, 4843 (1988).Google Scholar