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Effect of Si Layer in The ZnO Thin Films by Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

Hong Seong Kang ,
Jeong Seok Kang ,
Jae Won Kim  and
Sang Yeol Lee
Hong Seong Kang
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Jeong Seok Kang
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Jae Won Kim
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
Sang Yeol Lee
Affiliation:
Dept. of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, Seoul, 120-749, Korea
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Abstract

ZnO thin films and ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300°C in oxygen ambient pressure. The optical and structural properties changed by Si layer in ZnO thin film. UV and visible peak position was shifted by Si layer. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. The optical and structural properties of ZnO thin films and ZnOSi-ZnO multi-layer thin films were characterized by PL (Photoluminescence) and XRD(X-ray diffraction method), respectively. Electrical properties were measured by van der Pauw Hall measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C3.12
Copyright
Copyright © Materials Research Society 2003

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