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The Effect of Si, F Implantation on the Formation and Light Emitting Properties of Porous Silicon

Published online by Cambridge University Press:  22 February 2011

Lianwei Wang
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, P.R. China
Chenglu Lin
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, P.R. China
Ping Liu
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, P.R. China
Zuyao Zhou
Affiliation:
Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, P.R. China
Shichang Zou
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, P.R. China
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Abstract:

The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si + , F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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