The Effect of Si, F Implantation on the Formation and Light Emitting Properties of Porous Silicon
Published online by Cambridge University Press: 22 February 2011
The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si + , F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 445
- Copyright © Materials Research Society 1994