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The Effect of Rapid Thermal Annealing on the Dislocation Structure of Silicon on Sapphire

Published online by Cambridge University Press:  28 February 2011

M. Aindow ,
J. L. Batstone ,
L. Pfeiffer ,
J. M. Phillips  and
R. C. Pond
M. Aindow
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, Liverpool, L69 3BX, UK. Now at: Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106, USA
J. L. Batstone
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, Liverpool, L69 3BX, UK.
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA.
J. M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974, USA.
R. C. Pond
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, Liverpool, L69 3BX, UK.
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Abstract

A Transmission Electron Microscopy study of the defect microstructure in Silicon On Sapphire before and after Rapid Thermal Annealing is presented. The annealed material is shown to contain a much lower density of twins and threading dislocations. Comparison with the asgrown microstructure enables possible explanations to be proposed for these observations in terms of the removal of barriers to the introduction and movement of dislocations in response to misfit and thermal expansion strains. A regular array of misfit dislocations is observed in the interface of annealed material. These have non-rational line directions and are consistent with complete misfit accommodation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 373
Copyright
Copyright © Materials Research Society 1989

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References

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