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Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of A a-Si:H P-I-N Diode

Published online by Cambridge University Press:  21 February 2011

R. Amokrane
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR A0258 du CNRS) Ecole Polytechnique, 91128 Palaiseau Cedex, France
R. Vanderhaghen
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR A0258 du CNRS) Ecole Polytechnique, 91128 Palaiseau Cedex, France
M. Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

We have measured dark and photocurrent under double injection. The injection gain gives information on capture rate, dos shape and recombination mechanism. Before degradation, the recombination is bimolecular, and it becomes monomolecular after degradation. We observe effects of interface change as well as thickness inhomogeneity.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

1. Rose, A.Concepts in Photoconductivity and allied problemsJohn Walley & Sons 1963 Google Scholar
2. A result similar to this is shown in: Lampert, M.A. and Mark, P.Current Injection in SolidsAcademic Press New York 1970 Google Scholar
3. Cannella, V. and Silver, M. J. Non crystalline Solids 77&78, 1421, 1986 Google Scholar
4. Roca i Cabarrocas, P., Chevrier, J.B., Hue, J., Lloret, A., Parey, J.Y. and Schmitt, J.P.M., J. Vac. Sci Technol. A9, 4, 1991 Google Scholar
5. Street, R.A. and Hack, M. J. Non crystalline Solids, 137&138, 263, 1991 CrossRefGoogle Scholar
6. Han, Daxing, Wang, Keda and Silver, Marvin, J. Non crystalline Solids. 137&138, 267, 1991 CrossRefGoogle Scholar
7. Street, R.A. ( Private communication )Google Scholar
8. Winborne, G., Xu, Le, and Silver, M., Mat Res Soc. Proc. 118, 501, 1988 CrossRefGoogle Scholar

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Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of A a-Si:H P-I-N Diode
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