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Effect of Photodegradation on Transient and Steady State Forward Bias Characteristics of A a-Si:H P-I-N Diode

Published online by Cambridge University Press:  21 February 2011

R. Amokrane ,
R. Vanderhaghen  and
M. Silver
R. Amokrane
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR A0258 du CNRS) Ecole Polytechnique, 91128 Palaiseau Cedex, France
R. Vanderhaghen
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR A0258 du CNRS) Ecole Polytechnique, 91128 Palaiseau Cedex, France
M. Silver
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
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Abstract

We have measured dark and photocurrent under double injection. The injection gain gives information on capture rate, dos shape and recombination mechanism. Before degradation, the recombination is bimolecular, and it becomes monomolecular after degradation. We observe effects of interface change as well as thickness inhomogeneity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 467
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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