Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-04T03:24:51.918Z Has data issue: false hasContentIssue false

Effect of Particle Size During Tungsten Chemical Mechanical Polishing

Published online by Cambridge University Press:  10 February 2011

Marc Bielmann
Affiliation:
Department of Materials Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, FL 32611
Uday Mahajan
Affiliation:
Department of Materials Science and Engineering and Engineering Research Center for Particle Science and Technology, University of Florida, Gainesville, FL 32611
Rajiv K. Singh
Affiliation:
rsing@mail.mse.ufl.edu
Get access

Abstract

Abrasive particle size plays a critical role in controlling the polishing rate and the surface roughness during chemical mechanical polishing (CMP) of interconnect materials during semiconductor processing. Earlier reports on the effect of particle size on polishing of silica show contradictory conclusions. We have conducted controlled measurements to determine the effect of alumina particle size during polishing of tungsten. Alumina particles of similar phase and shape with size varying from 0.1 μm to 10 μm diameter have been used in these experiments. The polishing experiments showed that the local roughness of the polished tungsten surfaces was insensitive to alumina particle size. The tungsten removal rate was found to increase with decreasing particle size and increased solids loading. These results suggest that the removal rate mechanism is not a scratching type process, but may be related to the contact surface area between particles and polished surface controlling the reaction rate. The concept developed in our work showing that the removal rate is controlled by the contact surface area between particles and polished surface is in agreement with the different explanations for tungsten removal.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kaufman, F. B., Thompson, D.B., Broadie, R. E., Jaso, M. A., Guthrie, W. L., Pearson, D. J., and Small, M. B., J. Electrochem. Soc. 138, 3460(1991)10.1149/1.2085434Google Scholar
2. Stein, D.J., Hetherington, D., Guilinger, T., and Cecchi, J.L., J. Electrochem. Soc. 145, 3190(1998)10.1149/1.1838785Google Scholar
3. Preston, F., J. Soc. Glass Technol. 11 247(1927)Google Scholar
4. Brown, N.J., Baker, P.C., and Maney, R.T., Proc. SPIE 306, 42(1981)10.1117/12.932717Google Scholar
5. Jairath, R., Desai, M., Stell, M., Tolles, R., and Scherber-Brewer, D., in Advanced Metallization for Devices and Circuits-Science, Technology and Manufacturability, edited by S.P, Murarka, A., Katz, K.N., Tu and Maex, K. (Mater. Res. Soc. Proc. 337, 121(1994)Google Scholar
6. Cook, L.M., J. Non-cryst. Solids 120, 152(1990)10.1016/0022-3093(90)90200-6Google Scholar
7. Sivaram, S., Bath, M. H.M., Lee, E., Leggett, R., and Tolles, R., Proc. SRC Topical Research Conference on Chem-Mechanical Polishing for Planarization, SRC, Research Triangle Park, NC (1992), proc. Vol. #P92008Google Scholar
8. Izumitani, T., in Treatise on Materials Science and Technology, eds. M., Tomozawa and R., Doremus, Academic Press, New York, (1979), p. 115 Google Scholar
9. Steigerwald, J. M., Murarka, S. P. and Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials, John Wiley &; Sons, Inc.(1997)10.1002/9783527617746Google Scholar